Thursday, October 7, 2021, 16:00
online only
(for the zoom link contact michael.spira@psi.ch, johannes.schlenk@psi.ch or
antonio.coutinho@psi.ch)
Lorenzo Paolozzi, University of Geneva
Abstract:
The potential benefit of combining precise timing measurement with
state-of-the-art tracking capability has become clear to the high-energy
physics community, with applications ranging from pile-up suppression to
time-of-flight and support to fast tracking algorithms. All these
features ultimately open the possibility to new experiments.
The development of ultra fast silicon pixel detectors with
tens-of-picosecond time resolution is a design challenge that requires
adding a new level of complexity to the existing tracking
devices. Introducing a new feature on an existing detector technology
requires accepting a trade-off on other parameters: the cost may be
increasing the power consumption, reducing space resolution or losing
sensitivity to the smallest signals. An effective way to extend the
parameter space available to designers is adopting SiGe Heterojuction
Bipolar Transistors (HBTs) for signal amplification on a SiGe BiCMOS
platform. The R&D started in 2015 at the University of Geneva on
monolithic silicon pixel detectors in SiGe BiCMOS showed that they can
combine state-of-the-art timing and tracking capability without added
cost in power consumption. The results of this research and the future
perspectives for fast pixel detectors will be discussed.